1 3 2 pin 16.5 0.3 10.2 0.2 15.0 0.5 4.0 0.3 13.5 0.5 2.6 0.15 1.4 0.1 0.6 0.1 4.5 0.2 3.1 +0.2 -0.1 |? 3 . 3 0 . 1 ?3.20.2 8.2 0.2 2.6 0.2 0.6 0.1 features mechanical data p o s i t i on: a ny maximum ratings and electrical characteristics ratings at 25 a m b i ent t e m pe r a t u r e un l e s s o t h e r w i s e s pe c i f i ed. un i t s maximum recurrent peak reverse voltage v rrm v max imum rms v oltage v r m s v m a x i m um d c b l o c k i ng v o l t a g e v dc v m a x i m um a v e r a g e f o r w a r d t o t a l de v i c e m rectif ied current @t c = 1 05 c i f (a v ) a peak forw ard surge current 8.3ms single half b s i ne - w a v e s u pe r i m p o s e d on r ated l o a d i f s m a m a x i m u m f o r wa r d (i f =15a,t c =25 ) ( i f = 15 a , t c = 1 2 5 ) v o l t a g e ( i f = 30 a , t c = 2 5 ) ( n ote 1 ) ( i f = 3 0 a , t c = 1 2 5 ) maximum reverse current @t c = 2 5 at rated dc blocking voltage @t c = 1 2 5 m a x i m u m t h e r m a l r e s i s t a n c e (note2) r j c /w operating junction temperature range t j storage temperature range t stg 2. thermal resistance from junction to case. m a 30 35 40 45 50 60 80 100 3 0 200 21 2 5 28 32 35 42 56 70 3 0 35 40 4 5 50 60 80 100 v o l t a g e r a n g e: 3 0 - 10 0 v curr e n t : 3 0 a metal silicon junction, majority carrier conduction. ca s e : j e d e c ito-220ab , m o l ded p l a s t i c body schottky barrier rectifier s h i gh c u r r ent c apa c i t y , l o w f o r w a r d v o l t age d r op. n o t e : 1 . p u l s e t e s t: 3 0 0 s pu l s e w i d t h , 1% d u t y c y c l e. - 5 5 - --- + 1 50 - 5 5 - --- + 15 0 t e r m i na l s : s o l de r a b l e per m i l - s t d - 750, 1 1 m e t hod 2026 i r v f 1.0 0.2 6.8 4.4 ito-220ab mbrf 3 0 3 0c t - - - mbrf 3 0 100c t mbr f mbr f mbr f mbr f mbr f mbr f mbr f mbr f 3 0 3 0 ct 3 035 ct 3 040 ct 3 045 ct 3 050 ct 3 060 ct 3 080 ct 3 0100 ct g ua r d r i ng f or o v er v o l t age p r o t e c t i on. high surge capacity. for use in low voltage, high frequency inverters, free 111 wheeling, and polarity protection applications. p o l a r i t y : a s m a r k e d w e i gh t : 0.08ounce, 2.24 grams 60 40 v 0.57 0.70 0.65 - 0.80 0.85 single phase,half wave,60hz,resistive or inductive load.for capactive load,derate current by 20%. dimensions in millimeters 0.84 0.95 0.95 0.72 0.85 0.75 diode semiconductor korea www.diode.kr
.1 500 .4 .5 .9 1.1 10 .6 1.0 .7 .8 pulse width = 300 s 1% duty cycle 1.3 1.4 .3 1.2 1 100 t j =125 t j =25 1.5 m b r f 30 3 0 c t - m b r f 3 045 c t m b r f 30 5 0 c t - m b r f 3 060 c t m b r f 30 8 0 c t - m b r f 3 0100 c t 10 04 0 6 0 20 100 120 140 80 mbrf3030ct-mbrf3060ct . 1 1 . 0 1 mbrf3080ct-MBRF30100CT t c =125 ?? t c =25 ?? mbrf3080ct-MBRF30100CT mbrf3030ct-mbrf3060ct 0 40 1 100 200 80 120 160 10 8 . 3 m s s i ng l e h a l f s i n e w a v e t j = 125 25 50 75 100 125 150 amperes average forward output current, amperes fi g. 3 -- typical forward characteri sti c f i g . 4 - - t y p i c al r e v e r s e c h ara c t e r i s t i c i n s t a n t a n e o u s f o r w a r d v o l t a g e , v o l t s mbrf3030ct - - - MBRF30100CT nu m be r o f c y c l e s a t 6 0 h z case t e m pe r a t ur e , instantaneous forward current, peak forward surge current, f i g . 2 - - f o r w ard d e ra t i n g cur v e amperes mi lli amperes pe r c e n t o f r a t e d p e ak r eve r se v o l t a g e ,% f i g . 1 - - p e a k f o r w ard s ur g e c u rr e nt instantaneous reverse current, 0 6.0 12 18 24 30 www.diode.kr diode semiconductor korea
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